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| CMLT2207G SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOminiTM device has been designed for small signal general purpose amplifier and switching applications. MARKING CODE: L7G SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA NPN (Q1) 75 40 6.0 PNP (Q2) 60 60 5.0 600 350 -65 to +150 357 UNITS V V V mA mW C C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=60V 10 ICBO VCB=50V 10 ICBO VCB=60V, TA=125C 10 ICBO VCB=50V, TA=125C 10 ICEV VCE=60V, VEB(OFF)=3.0V 10 ICEV VCE=30V, VEB(OFF)=500mV 50 IEBO VEB=3.0V 10 BVCBO IC=10A 75 60 BVCEO IC=10mA 40 60 BVEBO IE=10A 6.0 5.0 VCE(SAT) IC=150mA, IB=15mA 0.3 0.4 VCE(SAT) IC=500mA, IB=50mA 1.0 1.6 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 1.3 VBE(SAT) IC=500mA, IB=50mA 2.0 2.6 hFE VCE=10V, IC=0.1mA 35 75 VCE=10V, IC=1.0mA 50 100 hFE hFE VCE=10V, IC=10mA 75 100 hFE VCE=10V, IC=150mA 100 300 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 50 - UNITS nA nA nA nA nA nA nA V V V V V V V R3 (20-January 2010) CMLT2207G SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS fT VCE=20V, IC=20mA, f=100MHz fT VCE=20V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz Cib VEB=2.0V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz hie VCE=10V, IC=10mA, f=1.0kHz hre VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=10mA, f=1.0kHz hfe VCE=10V, IC=1.0mA, f=1.0kHz hfe VCE=10V, IC=10mA, f=1.0kHz hoe VCE=10V, IC=1.0mA, f=1.0kHz hoe VCE=10V, IC=10mA, f=1.0kHz rb'Cc VCB=10V, IE=20mA, f=31.8MHz NF VCE=10V, IC=100A, RS=1.0k, f=1.0kHz ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA toff VCC=6.0V, IC=150mA, IB1=IB2=15mA ts VCC=30V, IC=150mA, IB1=IB2=15mA ts VCC=6.0V, IC=150mA, IB1=IB2=15mA tf VCC=30V, IC=150mA, IB1=IB2=15mA tf VCC=6.0V, IC=150mA, IB1=IB2=15mA NPN (Q1) MIN MAX 300 8.0 25 2.0 8.0 0.25 1.25 8.0 4.0 50 300 75 375 5.0 35 25 200 150 4.0 10 25 225 60 - PNP (Q2) MIN MAX 200 8.0 30 45 10 40 100 80 30 UNITS MHz MHz pF pF pF k k x10-4 x10-4 S S ps dB ns ns ns ns ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 w w w. c e n t r a l s e m i . c o m MARKING CODE: L7G R3 (20-January 2010) |
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